An improved 2.5 GHz electron pump: single-electron transport through shallow-etched point contacts driven by surface acoustic waves

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dc.creatorUtko, P.
dc.creatorGloos, K.
dc.creatorHansen, J. B.
dc.creatorLindelof, P. E.
dc.date2003-11-04
dc.date.accessioned2026-07-07T02:54:35Z
dc.date.available2026-07-07T02:54:35Z
dc.descriptionWe present an experimental study of a 2.5 GHz electron pump based on the quantized acoustoelectric current driven by surface acoustic waves (SAWs) through a shallow-etched point contact in a GaAs/AlGaAs heterostructure. At low temperatures and with an additional counter-propagating SAW beam, up to n = 20 current plateaus at I=nef could be resolved, where n is an integer, e the electron charge, and f the SAW frequency. In the best case the accuracy of the first plateau at 0.40 nA was estimated to be dI/I = +/- 25 ppm over 0.25 mV in gate voltage, which is better than previous results.
dc.description11 pages, 4 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0311060
dc.identifierhttp://arxiv.org/abs/cond-mat/0311060
dc.identifierActa Phys. Pol. A 103 (6): 533-538 June 2003
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/22608
dc.subjectMesoscale and Nanoscale Physics
dc.titleAn improved 2.5 GHz electron pump: single-electron transport through shallow-etched point contacts driven by surface acoustic waves
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