Simulated ion-sputtering and Auger electron spectroscopy depth profiling study of intermixing in Cu/Co

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dc.creatorMenyhárd, M.
dc.creatorSüle, P.
dc.date2005-12-02
dc.date.accessioned2026-07-07T06:53:06Z
dc.date.available2026-07-07T06:53:06Z
dc.descriptionThe ion-bombardment induced evolution of intermixing is studied by molecular dynamics simulations and by Auger electron spectroscopy depth profiling analysis (AESD) in Cu/Co multilayer. It has been shown that from AESD we can derive the low-energy mixing rate and which can be compared with the simulated values obtained by molecular dynamics (MD) simulations.The overall agreement is reasonably good hence MD can hopefully be used to estimate the rate of intermixing in various interface systems.
dc.description3 pages, 3 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0512053
dc.identifierhttp://arxiv.org/abs/cond-mat/0512053
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/105469
dc.subjectMaterials Science
dc.titleSimulated ion-sputtering and Auger electron spectroscopy depth profiling study of intermixing in Cu/Co
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