Diagnosis of transport properties in Ferromagnets

dc.creatorArulsamy, Andrew Das
dc.date2004-06-01
dc.date2005-03-11
dc.date.accessioned2026-07-07T02:58:25Z
dc.date.available2026-07-07T02:58:25Z
dc.descriptionThe resistivity model as a function of temperature and ionization energy (doping) is derived with further confinements from spin-disorder scattering in ferromagnetic phase. Magnetization and polaronic effects capture the mechanism of both spin independent and spin-assisted charge transport of ferromagnets, including the newly reported Mn$_x$Ge$_{1-x}$ ferromagnetic semiconductor. The computed $T_{crossover}$ below $T_C$ and carrier density in Ga$_{1-x}$Mn$_x$As system are 8-12 K and 10$^{19}$ cm$^{-3}$, remarkably identical with the experimental values of 10-12 K and 10$^{18}-10^{20}$ cm$^{-3}$ respectively. The calculated charge carriers density for Mn$_x$Ge$_{1-x}$ is 10$^{19}$ cm$^{-3}$, which is also in the same order with the experimental values.
dc.descriptionAdditional section on iFDS (cond-mat/0410443)
dc.identifierhttps://arxiv.org/abs/cond-mat/0406030
dc.identifierhttp://arxiv.org/abs/cond-mat/0406030
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/24082
dc.subjectMaterials Science
dc.subjectStrongly Correlated Electrons
dc.titleDiagnosis of transport properties in Ferromagnets
dc.typetext

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