Interface-mediated pairing in field effect devices

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dc.creatorKoerting, V.
dc.creatorYuan, Qingshan
dc.creatorHirschfeld, P. J.
dc.creatorKopp, T.
dc.creatorMannhart, J.
dc.date2004-02-25
dc.date2007-01-15
dc.date.accessioned2026-07-07T07:40:18Z
dc.date.available2026-07-07T07:40:18Z
dc.descriptionWe consider the pairing induced in a strictly 2D electron gas (2DEG) by a proximate insulating film with polarizable localized excitations. Within a model of interacting 2D electrons and localized two-level systems, we calculate the critical temperature $T_c$ as a function of applied voltage and for different materials properties. Assuming that a sufficient carrier density can be induced in a field-gated device, we argue that superconductivity may be observable in such systems. $T_c$ is found to be a nonmonotonic function of both electric field and the excitation energy of the two-level systems.
dc.description11 pages, 11 figures, text and figures updated to published version
dc.identifierhttps://arxiv.org/abs/cond-mat/0402624
dc.identifierhttp://arxiv.org/abs/cond-mat/0402624
dc.identifierPhys. Rev. B 71, 104510 (2005)
dc.identifierdoi:10.1103/PhysRevB.71.104510
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/121738
dc.subjectStrongly Correlated Electrons
dc.subjectSuperconductivity
dc.titleInterface-mediated pairing in field effect devices
dc.typetext

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