Suppression of weak localization effects in low-density metallic 2D holes

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dc.creatorMills Jr., A. P.
dc.creatorRamirez, A. P.
dc.creatorGao, X. P. A.
dc.creatorPfeiffer, L. N.
dc.creatorWest, K. W.
dc.creatorSimon, S. H.
dc.date2001-01-03
dc.date.accessioned2026-07-07T02:39:55Z
dc.date.available2026-07-07T02:39:55Z
dc.descriptionWe have measured the conductivity in a gated high-mobility GaAs two dimensional hole sample with densities in the range (7-17)x10^9 cm^-2 and at hole temperatures down to 5x10^-3 E_F. We measure the weak localization corrections to the conductivity g=G/(e^2/h) as a function of magnetic field (Delta g=0.019 +/- 0.006 at g=1.5 and T=9 mK) and temperature (d ln g/dT<0.0058 and 0.0084 at g=1.56 and 2.8). These values are less than a few percent of the value 1/pi predicted by standard weak localization theory for a disordered 2D Fermi liquid
dc.identifierhttps://arxiv.org/abs/cond-mat/0101020
dc.identifierhttp://arxiv.org/abs/cond-mat/0101020
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/17210
dc.subjectStrongly Correlated Electrons
dc.subjectMesoscale and Nanoscale Physics
dc.titleSuppression of weak localization effects in low-density metallic 2D holes
dc.typetext

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