Limit to 2D mobility in modulation-doped GaAs quantum structures: How to achieve a mobility of 100 millions

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dc.creatorHwang, E. H.
dc.creatorSarma, S. Das
dc.date2008-04-29
dc.date.accessioned2026-07-07T10:02:39Z
dc.date.available2026-07-07T10:02:39Z
dc.descriptionConsidering scattering by unintentional background charged impurities and by charged dopants in the modulation doping layer as well as by GaAs acoustic phonons, we theoretically consider the practical intrinsic (phonons) and extrinsic (background and dopants) limits to carrier mobility in modulation doped AlGaAs-GaAs 2D semiconductor structures. We find that reducing background impurity density to $10^{12}$ cm$^{-3}$ along with a modulation doping separation of 1000 Åor above will achieve a mobility of $100 \times 10^6$ cm$^2$/Vs at a carrier density of $3\times 10^{11}$ cm$^{-2}$ for T=1K. At T=4 (10)K, however, the hard limit to the 2D mobility would be set by acoustic phonon scattering with the maximum intrinsic mobility being no higher than 22 $(5) \times 10^6$ cm$^2$/Vs. Detailed numerical results are presented as a function of carrier density, modulation doping distance, and temperature to provide a quantitative guide to experimental efforts for achieving ultra-high 2D mobilities.
dc.description6 pages, 6 figures
dc.identifierhttps://arxiv.org/abs/0804.4684
dc.identifierhttp://arxiv.org/abs/0804.4684
dc.identifierPhys. Rev. B 77, 235437 (2008)
dc.identifierdoi:10.1103/PhysRevB.77.235437
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/169051
dc.subjectMesoscale and Nanoscale Physics
dc.subjectMaterials Science
dc.titleLimit to 2D mobility in modulation-doped GaAs quantum structures: How to achieve a mobility of 100 millions
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