High Temperature Ferromagnetism in Zn1-xMnxO semiconductor thin films

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dc.creatorTheodoropoulou, Nikoleta
dc.creatorMisra, Vinith
dc.creatorPhilip, John
dc.creatorLeClair, Patrick
dc.creatorBerera, Geetha P.
dc.creatorMoodera, Jagadeesh S.
dc.creatorSatpati, Biswarup
dc.creatorSom, Tapobrata
dc.date2004-08-12
dc.date.accessioned2026-07-07T02:59:43Z
dc.date.available2026-07-07T02:59:43Z
dc.descriptionClear evidence of ferromagnetic behavior at temperatures >400 K as well as spin polarization of the charge carriers have been observed in ZnMnO thin films grown on Al2O3 and MgO substrates. The magnetic properties depended on the exact Mn concentration and the growth parameters. In well-characterized single-phase films, the magnetic moment is 4.8?B/Mn at 350 K, the highest moment yet reported for any Mn doped magnetic semiconductor. Anomalous Hall effect shows that the charge carriers (electrons) are spin polarized and participate in the observed ferromagnetic behavior.
dc.description15 pages, 4 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0408294
dc.identifierhttp://arxiv.org/abs/cond-mat/0408294
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/24624
dc.subjectMaterials Science
dc.titleHigh Temperature Ferromagnetism in Zn1-xMnxO semiconductor thin films
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