Evidence For Heavy Hole and Light Hole Current Separation in P-Type Resonant Tunneling Diodes With Prewells

Simple item page
dc.creatorLewis, R. M.
dc.creatorWei, H. P.
dc.creatorLin, S. Y.
dc.creatorKlem, J. F.
dc.date2000-05-24
dc.date.accessioned2026-07-07T02:37:44Z
dc.date.available2026-07-07T02:37:44Z
dc.descriptionWe investigate the transport of holes through $AlAs/In_{.10}Ga_{.90}As$ resonant tunneling diodes which utilize $In_xGa_{1-x}As$ prewells in the emitter with $x=0,.10,$ and $.20$. The data show an increase in peak current and bias at resonance and a concurrent increase in the peak-to-valley ratio with increasing x. We explain this enhancement in tunneling as due to confinement (or localiz- ation) of charges in the prewell and the formation of direct heavy(light) hole to heavy(light) hole conduction channels as a consequence.
dc.identifierhttps://arxiv.org/abs/cond-mat/0005421
dc.identifierhttp://arxiv.org/abs/cond-mat/0005421
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/16402
dc.subjectMesoscale and Nanoscale Physics
dc.titleEvidence For Heavy Hole and Light Hole Current Separation in P-Type Resonant Tunneling Diodes With Prewells
dc.typetext

Files

Collections

arXiv