Voltage Induced Hidden Symmetry and Photon Entanglement Generation in a Single, Site-Selected Quantum Dot

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dc.creatorReimer, Michael E.
dc.creatorKorkusinski, Marek
dc.creatorLefebvre, Jacques
dc.creatorLapointe, Jean
dc.creatorPoole, Philip J.
dc.creatorAers, Geof C.
dc.creatorDalacu, Dan
dc.creatorMcKinnon, W. Ross
dc.creatorFrederick, Simon
dc.creatorHawrylak, Pawel
dc.creatorWilliams, Robin L.
dc.date2007-06-07
dc.date.accessioned2026-07-07T08:04:34Z
dc.date.available2026-07-07T08:04:34Z
dc.descriptionPresent proposals for the realisation of entangled photon pair sources using the radiative decay of the biexciton in semiconductor quantum dots are limited by the need to enforce degeneracy of the two intermediate, single exciton states. We show how this requirement is lifted if the biexciton binding energy can be tuned to zero and we demonstrate this unbinding of the biexciton in a single, pre-positioned InAs quantum dot subject to a lateral electric field. Full Configuration-Interaction calculations are presented that reveal how the biexciton is unbound through manipulation of the electron-hole Coulomb interaction and the consequent introduction of Hidden Symmetry.
dc.description4 pages, 4 figures submitted to Physical Review Letters
dc.identifierhttps://arxiv.org/abs/0706.1075
dc.identifierhttp://arxiv.org/abs/0706.1075
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/130013
dc.subjectQuantum Physics
dc.titleVoltage Induced Hidden Symmetry and Photon Entanglement Generation in a Single, Site-Selected Quantum Dot
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