Phase study of oscillatory resistances in high mobility GaAs/AlGaAs devices: Indications of a new class of integral quantum Hall effect

Simple item page
dc.creatorMani, R. G.
dc.creatorJohnson, W. B.
dc.creatorUmansky, V.
dc.creatorNarayanamurti, V.
dc.creatorPloog, K.
dc.date2006-06-20
dc.date.accessioned2026-07-07T07:12:46Z
dc.date.available2026-07-07T07:12:46Z
dc.descriptionAn experimental study of the high mobility GaAs/AlGaAs system at large-$ν$ indicates several distinct phase relations between the oscillatory diagonal- and Hall- resistances, and suggests a new class of integral quantum Hall effect, which is characterized by "anti-phase" Hall- and diagonal- resistance oscillations.
dc.identifierhttps://arxiv.org/abs/cond-mat/0606517
dc.identifierhttp://arxiv.org/abs/cond-mat/0606517
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/112190
dc.subjectMesoscale and Nanoscale Physics
dc.titlePhase study of oscillatory resistances in high mobility GaAs/AlGaAs devices: Indications of a new class of integral quantum Hall effect
dc.typetext

Files

Collections

arXiv