A Rad-hard CMOS Active Pixel Sensor for Electron Microscopy

Simple item page
dc.creatorBattaglia, Marco
dc.creatorContarato, Devis
dc.creatorDenes, Peter
dc.creatorDoering, Dionisio
dc.creatorGiubilato, Piero
dc.creatorKim, Tae Sung
dc.creatorMattiazzo, Serena
dc.creatorRadmilovic, Velimir
dc.creatorZalusky, Sarah
dc.date2008-11-18
dc.date.accessioned2026-07-07T12:39:14Z
dc.date.available2026-07-07T12:39:14Z
dc.descriptionMonolithic CMOS pixel sensors offer unprecedented opportunities for fast nano-imaging through direct electron detection in transmission electron microscopy. We present the design and a full characterisation of a CMOS pixel test structure able to withstand doses in excess of 1 MRad. Data collected with electron beams at various energies of interest in electron microscopy are compared to predictions of simulation and to 1.5 GeV electron data to disentagle the effect of multiple scattering. The point spread function measured with 300 keV electrons is (8.1 +/- 1.6) micron for 10 micron pixel and (10.9 +/- 2.3) micron for 20 micron pixels, respectively, which agrees well with the values of 8.4 micron and 10.5 micron predicted by our simulation.
dc.description16 pages, 9 figures, submitted to Nucl. Instr and Meth A
dc.identifierhttps://arxiv.org/abs/0811.2833
dc.identifierhttp://arxiv.org/abs/0811.2833
dc.identifierNucl.Instrum.Meth.A598:642-649,2009
dc.identifierdoi:10.1016/j.nima.2008.09.029
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/219037
dc.subjectInstrumentation and Detectors
dc.titleA Rad-hard CMOS Active Pixel Sensor for Electron Microscopy
dc.typetext

Files

Collections

arXiv