Anderson localization in carbon nanotubes: defect density and temperature effects

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dc.creatorBiel, Blanca
dc.creatorGarcia-Vidal, F. J.
dc.creatorRubio, Angel
dc.creatorFlores, Fernando
dc.date2005-11-10
dc.date.accessioned2026-07-07T06:46:00Z
dc.date.available2026-07-07T06:46:00Z
dc.descriptionThe role of irradiation induced defects and temperature in the conducting properties of single-walled (10,10) carbon nanotubes has been analyzed by means of a first-principles approach. We find that di-vacancies modify strongly the energy dependence of the differential conductance, reducing also the number of contributing channels from two (ideal) to one. A small number of di-vacancies (5-9) brings up strong Anderson localization effects and a seemly universal curve for the resistance as a function of the number of defects. It is also shown that low temperatures, around 15-65 K, are enough to smooth out the fluctuations of the conductance without destroying the exponential dependence of the resistivity as a function of the tube length.
dc.description4 pages, 4 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0511265
dc.identifierhttp://arxiv.org/abs/cond-mat/0511265
dc.identifierPhysical Review Letters 95 (2005) 266801
dc.identifierdoi:10.1103/PhysRevLett.95.266801
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/103205
dc.subjectMaterials Science
dc.subjectStrongly Correlated Electrons
dc.titleAnderson localization in carbon nanotubes: defect density and temperature effects
dc.typetext

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