Magnetic-field induced band-structure change in CeBiPt

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dc.creatorKozlova, N.
dc.creatorHagel, J.
dc.creatorDoerr, M.
dc.creatorWosnitza, J.
dc.creatorEckert, D.
dc.creatorMueller, K. -H.
dc.creatorSchultz, L.
dc.creatorOpahle, I.
dc.creatorElgazzar, S.
dc.creatorRichter, Manuel
dc.creatorGoll, G.
dc.creatorZwicknagl, G.
dc.creatorYoshino, T.
dc.creatorTakabatake, T.
dc.date2005-02-11
dc.date.accessioned2026-07-07T03:03:42Z
dc.date.available2026-07-07T03:03:42Z
dc.descriptionWe report on a field-induced change of the electronic band structure of CeBiPt as evidenced by electrical-transport measurements in pulsed magnetic fields. Above ~25 T, the charge-carrier concentration increases nearly 30% with a concomitant disappearance of the Shubnikov-de Haas signal. These features are intimately related to the Ce 4f electrons since for the non-4f compound LaBiPt the Fermi surface remains unaffected. Electronic band-structure calculations point to a 4f-polarization-induced change of the Fermi-surface topology.
dc.description4 pages, 4 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0502279
dc.identifierhttp://arxiv.org/abs/cond-mat/0502279
dc.identifierPhysical Review Letters 95, 086403 (2005)
dc.identifierdoi:10.1103/PhysRevLett.95.086403
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/25852
dc.subjectStrongly Correlated Electrons
dc.titleMagnetic-field induced band-structure change in CeBiPt
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