The W center in self-implanted silicon is the self-interstitial cluster I_3

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dc.creatorLopez, G. M.
dc.creatorFiorentini, V.
dc.date2002-02-27
dc.date.accessioned2026-07-07T02:44:33Z
dc.date.available2026-07-07T02:44:33Z
dc.descriptionWe identify the W center in self-implanted crystalline Si with the three-membered self-interstitial cluster I_3 on the basis of first-principles density-functional-theory calculations matching all the known experimental signatures of the center (emission energy, extrinsic energy levels, activation energy and dissociation energy, local vibrational structure, and symmetry).
dc.descriptionRevTeX 4 pages, 2 embedded ps figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0202495
dc.identifierhttp://arxiv.org/abs/cond-mat/0202495
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/18971
dc.subjectMaterials Science
dc.titleThe W center in self-implanted silicon is the self-interstitial cluster I_3
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