Phase measurements using Two-Channel Fano Interference in a Semiconductor Quantum Dot

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dc.creatorFuhner, C.
dc.creatorKeyser, U. F.
dc.creatorHaug, R. J.
dc.creatorReuter, D.
dc.creatorWieck, A. D.
dc.date2003-07-23
dc.date.accessioned2026-07-07T02:52:33Z
dc.date.available2026-07-07T02:52:33Z
dc.descriptionWe investigate a lateral semiconductor quantum dot with a large number of electrons in the semi-open Fano regime. In transport measurements we observe three stable series of Fano resonances with similar lineshapes. We present a simple model explaining the temperature and V_{SD} dependence of the resonances. The Fano regime allows to investigate phase and coherence of the electronic wave function and astonishingly, we find no signs of decoherence in our system.
dc.description4 pages, 4 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0307590
dc.identifierhttp://arxiv.org/abs/cond-mat/0307590
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/21883
dc.subjectMesoscale and Nanoscale Physics
dc.titlePhase measurements using Two-Channel Fano Interference in a Semiconductor Quantum Dot
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