Beryllium nitride thin film grown by reactive laser ablation

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dc.creatorSoto, G.
dc.creatorDiaz, J. A.
dc.creatorMachorro, R.
dc.creatorReyes-Serrato, A.
dc.creatorde la Cruz, W.
dc.date2001-03-24
dc.date.accessioned2026-07-07T02:40:51Z
dc.date.available2026-07-07T02:40:51Z
dc.descriptionBeryllium nitride thin films were grown on silicon substrates by laser ablating a beryllium foil in molecular nitrogen ambient. The composition and chemical state were determined with Auger (AES), X-Ray photoelectron (XPS) and energy loss (EELS) spectroscopies. A low absorption coefficient in the visible region, and an optical bandgap of 3.8 eV, determined by reflectance ellipsometry, were obtained for films grown at nitrogen pressures higher than 25 mTorr. The results show that the reaction of beryllium with nitrogen is very effective using this preparation method, producing high quality films.
dc.description13 pages, 5 figures. Submitted to Materials Letters
dc.identifierhttps://arxiv.org/abs/cond-mat/0103504
dc.identifierhttp://arxiv.org/abs/cond-mat/0103504
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/17524
dc.subjectMaterials Science
dc.titleBeryllium nitride thin film grown by reactive laser ablation
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