Mechanism of Ambipolar Field-Effect Transistors on One-Dimensional Organic Mott Insulators

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dc.creatorYonemitsu, Kenji
dc.date2007-10-18
dc.date.accessioned2026-07-07T08:37:06Z
dc.date.available2026-07-07T08:37:06Z
dc.descriptionThe experimentally observed, ambipolar field-effect characteristics of Mott insulators are reproduced in the one-dimensional Hubbard model attached to a tight-binding model for source and drain electrodes. The formation of Schottky barriers, originating from the work-function difference, is taken into account by a potential satisfying the Poisson equation with an appropriate boundary condition. Then, these field-effect characteristics are shown to be related by unique current-voltage characteristics of metal-Mott-insulator interfaces.
dc.description6 pages, 4 figures
dc.identifierhttps://arxiv.org/abs/0710.3533
dc.identifierhttp://arxiv.org/abs/0710.3533
dc.identifierMultifunctional Conducting Molecular Materials (2007) pp.276-281
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/140286
dc.subjectStrongly Correlated Electrons
dc.titleMechanism of Ambipolar Field-Effect Transistors on One-Dimensional Organic Mott Insulators
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