Thin-Film Aluminum Microstructure as a Hot-Electron Microwave Radiation Detector

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dc.creatorBorisenko, I. Yu.
dc.creatorKuznetsov, V. I.
dc.creatorTulin, V. A.
dc.creatorEsteve, D.
dc.date2004-07-23
dc.date.accessioned2026-07-07T02:59:23Z
dc.date.available2026-07-07T02:59:23Z
dc.descriptionWe have found that the thin film aluminum structures shaped into a chain of micron sized islands connected by narrow isthmuses, can modify their electrical and structural properties under microwave radiation. As a result, at the temperature of 4.2 K the film structures turn into a kind of lateral periodic structure N-S-N, where N is for normal islands, S is for superconducting isthmuses. Current-voltage characteristics of the samples, as well as changes of these characteristics under low power radiation, have been studied over the temperature range from 1.3 to 10 K. The sensitivity of a structure as a microwave detector runs 10^{5} V/W.
dc.description4 pages, 4 figures, RevTex4
dc.identifierhttps://arxiv.org/abs/cond-mat/0407636
dc.identifierhttp://arxiv.org/abs/cond-mat/0407636
dc.identifierJ. Low Temp. Phys. 119, 483 (2000) [Special Issue: The Second International Chernogolovka Workshop on Low Temperature Physics in Microgravity Environment, CWS'99, July 28-August 2, 1999, Chernogolovka, Russia]
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/24488
dc.subjectSuperconductivity
dc.subjectMesoscale and Nanoscale Physics
dc.titleThin-Film Aluminum Microstructure as a Hot-Electron Microwave Radiation Detector
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