Polarized emission lines from A- and B-type excitonic complexes in single InGaN/GaN quantum dots

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dc.creatorWinkelnkemper, M.
dc.creatorSeguin, R.
dc.creatorRodt, S.
dc.creatorSchliwa, A.
dc.creatorReissmann, L.
dc.creatorStrittmatter, A.
dc.creatorHoffmann, A.
dc.creatorBimberg, D.
dc.date2007-05-24
dc.date.accessioned2026-07-07T08:09:43Z
dc.date.available2026-07-07T08:09:43Z
dc.descriptionCathodoluminescence measurements on single InGaN/GaN quantum dots (QDs) are reported. Complex spectra with up to five emission lines per QD are observed. The lines are polarized along the orthogonal crystal directions [1 1 -2 0] and [-1 1 0 0]. Realistic eight-band k.p electronic structure calculations show that the polarization of the lines can be explained by excitonic recombinations involving hole states which are either formed by the A or the B valence band.
dc.descriptionaccepted at Journal of Applied Physics
dc.identifierhttps://arxiv.org/abs/0705.3595
dc.identifierhttp://arxiv.org/abs/0705.3595
dc.identifierJ. Appl. Phys. 101, 113708 (2007)
dc.identifierdoi:10.1063/1.2743893
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/131621
dc.subjectMaterials Science
dc.titlePolarized emission lines from A- and B-type excitonic complexes in single InGaN/GaN quantum dots
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