In situ growth regime characterization of cubic GaN using reflection high energy electron diffraction

Simple item page
dc.creatorSchoermann, J.
dc.creatorPotthast, S.
dc.creatorAs, D. J.
dc.creatorLischka, K.
dc.date2007-02-01
dc.date.accessioned2026-07-07T07:44:12Z
dc.date.available2026-07-07T07:44:12Z
dc.descriptionCubic GaN layers were grown by plasma-assisted molecular beam epitaxy on 3C-SiC (001)substrates. In situ reflection high energy electron diffraction was used to quantitatively determine the Ga coverage of the GaN surface during growth. Using the intensity of the electron beam as a probe,optimum growth conditions of c-GaN were found when a 1 ML Ga coverage is formed at the surface. 1 micrometer thick c-GaN layers had a minimum surface roughness of 2.5 nm when a Ga coverage of 1 ML was established during growth. These samples revealed also a minimum full width at half maximum of the (002)rocking curve.
dc.description3pages with 4 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0702018
dc.identifierhttp://arxiv.org/abs/cond-mat/0702018
dc.identifierApplied Physics letters, vol. 90, 041918 (2007)
dc.identifierdoi:10.1063/1.2432293
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/123109
dc.subjectMaterials Science
dc.titleIn situ growth regime characterization of cubic GaN using reflection high energy electron diffraction
dc.typetext

Files

Collections

arXiv