Controlled nanostructures at La$_{0.7}$Sr$_{0.3}$MnO$_{3}$ thin film surfaces formed by STM lithography
| dc.creator | Liu, Yun | |
| dc.creator | Zhang, Jia | |
| dc.date | 2009-04-21 | |
| dc.date.accessioned | 2026-07-07T13:06:50Z | |
| dc.date.available | 2026-07-07T13:06:50Z | |
| dc.description | Nanoscale lithography on La$_{0.7}$Sr$_{0.3}$MnO$_{3}$ (LSMO) thin film surfaces has been performed by scanning tunneling microscopy under ambient conditions. From line-etching experiments we found that the line depth is increasing in a step-wise fashion with increasing bias voltage as well as with decreasing scan speed. On average, the depth of the etched lines is an integral multiple of the LSMO out-of-plane lattice constant about 0.4 nm. A minimum wall thickness of 1.5 nm was obtained between etched lines. We have utilized the ability to control the etched line depths to create complicated inverse-pyramid nanostructure. Our work shows the feasibility of using STM lithography to create controllable and complex nanoscale structures in LSMO thin film. | |
| dc.identifier | https://arxiv.org/abs/0904.3234 | |
| dc.identifier | http://arxiv.org/abs/0904.3234 | |
| dc.identifier.uri | http://salesiana.dossiersoluciones.com/handle/123456789/227908 | |
| dc.subject | Mesoscale and Nanoscale Physics | |
| dc.subject | Materials Science | |
| dc.title | Controlled nanostructures at La$_{0.7}$Sr$_{0.3}$MnO$_{3}$ thin film surfaces formed by STM lithography | |
| dc.type | text |