Overscreening in Hubbard electron systems

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dc.creatorSchüttler, H. -B.
dc.creatorGröber, C.
dc.creatorEvertz, H. G.
dc.creatorHanke, W.
dc.date1998-05-12
dc.date.accessioned2026-07-07T03:10:32Z
dc.date.available2026-07-07T03:10:32Z
dc.descriptionWe show that doping-induced charge fluctuations in strongly correlated Hubbard electron systems near the 1/2-filled, insulating limit cause overscreening of the electron-electron Coulomb repulsion. The resulting attractive screened interaction potential supports d_{x^2-y^2}-pairing with a strongly peaked, doping dependent pairing strength at lower doping, followed by s-wave pairing at larger doping levels.
dc.description4 pages, 3 figures, Revtex
dc.identifierhttps://arxiv.org/abs/cond-mat/9805133
dc.identifierhttp://arxiv.org/abs/cond-mat/9805133
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/28267
dc.subjectSuperconductivity
dc.subjectStrongly Correlated Electrons
dc.titleOverscreening in Hubbard electron systems
dc.typetext

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