Schottky barrier heights at polar metal/semiconductor interfaces

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dc.creatorBerthod, C.
dc.creatorBinggeli, N.
dc.creatorBaldereschi, A.
dc.date2003-06-16
dc.date.accessioned2026-07-07T07:46:07Z
dc.date.available2026-07-07T07:46:07Z
dc.descriptionUsing a first-principle pseudopotential approach, we have investigated the Schottky barrier heights of abrupt Al/Ge, Al/GaAs, Al/AlAs, and Al/ZnSe (100) junctions, and their dependence on the semiconductor chemical composition and surface termination. A model based on linear-response theory is developed, which provides a simple, yet accurate description of the barrier-height variations with the chemical composition of the semiconductor. The larger barrier values found for the anion- than for the cation-terminated surfaces are explained in terms of the screened charge of the polar semiconductor surface and its image charge at the metal surface. Atomic scale computations show how the classical image charge concept, valid for charges placed at large distances from the metal, extends to distances shorter than the decay length of the metal-induced-gap states.
dc.descriptionREVTeX 4, 11 pages, 6 EPS figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0306404
dc.identifierhttp://arxiv.org/abs/cond-mat/0306404
dc.identifierPhys. Rev. B 68, 085323 (2003)
dc.identifierdoi:10.1103/PhysRevB.68.085323
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/123725
dc.subjectMaterials Science
dc.titleSchottky barrier heights at polar metal/semiconductor interfaces
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