Terahertz detection with delta-doped GaAs/AlAs multiple quantum wells

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dc.creatorSeliuta, D.
dc.creatorCechavicius, B.
dc.creatorKavaliauskas, J.
dc.creatorKrivaite, G.
dc.creatorGrigelionis, I.
dc.creatorBalakauskas, S.
dc.creatorValusis, G.
dc.creatorSherliker, B.
dc.creatorHalsall, M. P.
dc.creatorLachab, M.
dc.creatorKhanna, S. P.
dc.creatorHarrison, P.
dc.creatorLinfield, E. H.
dc.date2007-11-03
dc.date.accessioned2026-07-07T08:40:32Z
dc.date.available2026-07-07T08:40:32Z
dc.descriptionThe authors demonstrate selective detection of terahertz radiation employing beryllium delta-doped GaAs/AlAs multiple quantum wells. The sensitivity up to 1 V/W within 4.2-7.3 THz range at liquid helium temperatures is reached. The Franz-Keldysh oscillations observed in photo- and electro-reflectance spectra allowed one to estimate built-in electric fields in the structures studied. It was found that the electric field strength in the cap layer region could vary from 10 kV/cm up to 26 kV/cm, depending on the structure design and temperature.
dc.description4 pages, 2 figures; presented in the 13th International Symposium on Ultrafast Phenomena in Semiconductors, Vilnius
dc.identifierhttps://arxiv.org/abs/0711.0438
dc.identifierhttp://arxiv.org/abs/0711.0438
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/141399
dc.subjectMaterials Science
dc.subjectOther Condensed Matter
dc.titleTerahertz detection with delta-doped GaAs/AlAs multiple quantum wells
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