Lande g-tensor in semiconductor nanostructures
| dc.creator | Alegre, T. P. Mayer | |
| dc.creator | Hernández, F. G. G. | |
| dc.creator | Pereira, A. L. C. | |
| dc.creator | Medeiros-Ribeiro, G. | |
| dc.date | 2006-04-25 | |
| dc.date | 2007-05-14 | |
| dc.date.accessioned | 2026-07-07T08:22:26Z | |
| dc.date.available | 2026-07-07T08:22:26Z | |
| dc.description | Understanding the electronic structure of semiconductor nanostructures is not complete without a detailed description of their corresponding spin-related properties. Here we explore the response of the shell structure of InAs self-assembled quantum dots to magnetic fields oriented in several directions, allowing the mapping of the g-tensor modulus for the s and p shells. We found that the g-tensors for the s and p shells show a very different behavior. The s-state in being more localized allows the probing of the confining potential details by sweeping the magnetic field orientation from the growth direction towards the in-plane direction. As for the p-state, we found that the g-tensor modulus is closer to that of the surrounding GaAs, consistent with a larger delocalization. These results reveal further details of the confining potentials of self-assembled quantum dots that have not yet been probed, in addition to the assessment of the g-tensor, which is of fundamental importance for the implementation of spin related applications. | |
| dc.description | 4 pages, 4 figures | |
| dc.identifier | https://arxiv.org/abs/cond-mat/0604578 | |
| dc.identifier | http://arxiv.org/abs/cond-mat/0604578 | |
| dc.identifier | Phys. Rev. Lett., 97, 236402 (2006). | |
| dc.identifier | doi:10.1103/PhysRevLett.97.236402 | |
| dc.identifier.uri | http://salesiana.dossiersoluciones.com/handle/123456789/135654 | |
| dc.subject | Materials Science | |
| dc.title | Lande g-tensor in semiconductor nanostructures | |
| dc.type | text |