Planar Hall Effect MRAM

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dc.creatorBason, Y.
dc.creatorKlein, L.
dc.creatorYau, J. -B.
dc.creatorHong, X.
dc.creatorHoffman, J.
dc.creatorAhn, C. H.
dc.date2005-08-31
dc.date.accessioned2026-07-07T03:06:29Z
dc.date.available2026-07-07T03:06:29Z
dc.descriptionWe suggest a new type of magnetic random access memory (MRAM) that is based on the phenomenon of the planar Hall effect (PHE) in magnetic films, and we demonstrate this idea with manganite films. The PHE-MRAM is structurally simpler than currently developed MRAM that is based on magnetoresistance tunnel junctions (MTJ), with the tunnel junction structure being replaced by a single layer film.
dc.identifierhttps://arxiv.org/abs/cond-mat/0508772
dc.identifierhttp://arxiv.org/abs/cond-mat/0508772
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/26823
dc.subjectMaterials Science
dc.titlePlanar Hall Effect MRAM
dc.typetext

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