Ultrafast optical switching of three-dimensional Si inverse opal photonic band gap crystals

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dc.creatorEuser, Tijmen G.
dc.creatorWei, Hong
dc.creatorKalkman, Jeroen
dc.creatorJun, Yoonho
dc.creatorPolman, Albert
dc.creatorNorris, David J.
dc.creatorVos, Willem L.
dc.date2007-05-29
dc.date2007-09-19
dc.date.accessioned2026-07-07T08:30:14Z
dc.date.available2026-07-07T08:30:14Z
dc.descriptionWe present ultrafast optical switching experiments on 3D photonic band gap crystals. Switching the Si inverse opal is achieved by optically exciting free carriers by a two-photon process. We probe reflectivity in the frequency range of second order Bragg diffraction where the photonic band gap is predicted. We find good experimental switching conditions for free-carrier plasma frequencies between 0.3 and 0.7 times the optical frequency: we thus observe a large frequency shift of up to D omega/omega= 1.5% of all spectral features including the peak that corresponds to the photonic band gap. We deduce a corresponding large refractive index change of Dn'_Si/n'_Si= 2.0% and an induced absorption length that is longer than the sample thickness. We observe a fast decay time of 21 ps, which implies that switching could potentially be repeated at GHz rates. Such a high switching rate is relevant to future switching and modulation applications.
dc.identifierhttps://arxiv.org/abs/0705.4250
dc.identifierhttp://arxiv.org/abs/0705.4250
dc.identifierJ. Appl. Phys. 102, 053111 (2007) (6 pages)
dc.identifierdoi:10.1063/1.2777134
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/138193
dc.subjectOptics
dc.titleUltrafast optical switching of three-dimensional Si inverse opal photonic band gap crystals
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