Generalized Einstein relation for disordered semiconductors - implications for device performance
| dc.creator | Roichman, Yohai | |
| dc.creator | Tessler, Nir | |
| dc.date | 2001-09-24 | |
| dc.date | 2004-02-03 | |
| dc.date.accessioned | 2026-07-07T02:42:48Z | |
| dc.date.available | 2026-07-07T02:42:48Z | |
| dc.description | The ratio between mobility and diffusion parameters is derived for a Gaussian-like density of states. This steady-state analysis is expected to be applicable to a wide range of organic materials (polymers or small molecules) as it relies on the existence of quasi-equilibrium only. Our analysis shows that there is an inherent dependence of the transport in trap-free disordered organic-materials on the charge density. The implications for the contact phenomena and exciton generation rate in light emitting diodes as well as channel-width in field-effect transistors is discussed. | |
| dc.identifier | https://arxiv.org/abs/cond-mat/0109432 | |
| dc.identifier | http://arxiv.org/abs/cond-mat/0109432 | |
| dc.identifier | Applied Physics Letters (80) 11, 1948 (2002) | |
| dc.identifier | doi:10.1063/1.1461419 | |
| dc.identifier.uri | http://salesiana.dossiersoluciones.com/handle/123456789/18288 | |
| dc.subject | Statistical Mechanics | |
| dc.title | Generalized Einstein relation for disordered semiconductors - implications for device performance | |
| dc.type | text |