Density-Dependent Squeezing of Excitons in Highly Excited Semiconductors

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dc.creatorQuang, Nguyen Hong
dc.date1995-07-31
dc.date.accessioned2026-07-07T03:07:50Z
dc.date.available2026-07-07T03:07:50Z
dc.descriptionThe time evolution from coherent states to squeezed states of high density excitons is studied theoretically based on the boson formalism and within the Random Phase Approximation. Both the mutual interaction between excitons and the anharmonic exciton-photon interaction due to phase-space filling of excitons are included in consideration. It is shown that the exciton squeezing depends strongly on the exciton density in semiconductors and becomes smaller with increasing the latter.
dc.description6 pages, Two figures (ps) available from author upon request
dc.identifierhttps://arxiv.org/abs/cond-mat/9507140
dc.identifierhttp://arxiv.org/abs/cond-mat/9507140
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/27323
dc.subjectCondensed Matter
dc.titleDensity-Dependent Squeezing of Excitons in Highly Excited Semiconductors
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