Growth rate and EBSD texture analysis of nitrogen doped diamond films

dc.creatorLiu, T.
dc.creatorRaabe, D.
dc.date2008-12-21
dc.date.accessioned2026-07-07T12:21:09Z
dc.date.available2026-07-07T12:21:09Z
dc.descriptionChemical-Vapor-Deposition (CVD) diamond films were prepared using a variation of nitrogen addition into the gas source admixture by a direct current CVD method. The influence of nitrogen addition on the crystallographic texture and grain shape evolution in heteroepitaxial polycrystalline diamond films was investigated using high-resolution electron backscattering diffraction (HR-EBSD) and X-ray diffraction (XRD). The analysis reveals that an addition of 1.5% N2 to the CH4 gas flow leads to a strong enhancement of a {110} fiber texture. The phenomenon is discussed in terms of a competitive growth selection mechanism.
dc.identifierhttps://arxiv.org/abs/0812.4025
dc.identifierhttp://arxiv.org/abs/0812.4025
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/213278
dc.subjectMaterials Science
dc.titleGrowth rate and EBSD texture analysis of nitrogen doped diamond films
dc.typetext

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