Carbon Nanotubes for Interconnect Applications

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dc.creatorKreupl, Franz
dc.creatorGraham, Andrew P.
dc.creatorLiebau, Maik
dc.creatorDuesberg, Georg S.
dc.creatorSeidel, Robert
dc.creatorUnger, Eugen
dc.date2004-12-20
dc.date.accessioned2026-07-07T03:02:48Z
dc.date.available2026-07-07T03:02:48Z
dc.descriptionWe briefly review the status of the application of carbon nanotubes (CNTs) for future interconnects and present results concerning possible integration schemes. Growth of single nanotubes at lithographically defined locations (vias) has been achieved which is a prerequisite for the use of CNTs as future interconnects. For the 20 nm node, a current density of 5 10^8 A/cm^2 and a resistance of 7.8 kOhm could be achieved for a single multi-walled CNT vertical interconnect.
dc.description4 pages, 11 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0412537
dc.identifierhttp://arxiv.org/abs/cond-mat/0412537
dc.identifierIEDM Tech. Dig., pp. 683 - 686, December 2004
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/25529
dc.subjectMaterials Science
dc.titleCarbon Nanotubes for Interconnect Applications
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