Electron correlations and bond-length fluctuations in layered copper oxides: electron versus hole doping

dc.creatorHozoi, L.
dc.creatorNishimoto, S.
dc.date2005-12-10
dc.date2006-03-23
dc.date.accessioned2026-07-07T08:21:24Z
dc.date.available2026-07-07T08:21:24Z
dc.descriptionWe investigate the nature of the electronic ground state and electron-lattice couplings for doped chains of CuO_4 plaquettes or CuO_6 octahedra. The undoped configuration implies here Cu 3d^9 and O 2p^6 formal valence states. The results of multiconfiguration calculations on 4-plaquette (or 4-octahedra) linear clusters indicate strong electron-lattice interactions and polaronic behavior of the doped particles, for both electron and hole doping. For certain phases of the oxygen-ion half-breathing distortions a multi-well energy landscape is predicted. Since each well is associated to carriers localized at different sites, the half-breathing displacements induce charge transfer along the chain. In the case of hole-doping, the trends found by ab initio multiconfiguration calculations on 4-octahedra clusters are confirmed by density-matrix renormalization-group calculations for a p-d, extended Hubbard model with chains of few tens of CuO_4 plaquettes. Under the assumption of charge separation and the formation of 1/3-doped stripes, our results seem to support the vibronic mechanism and the traveling charge-density wave scenario proposed in some recent contributions for superconductivity in copper oxides.
dc.descriptionreferences added, typos corrected
dc.identifierhttps://arxiv.org/abs/cond-mat/0512219
dc.identifierhttp://arxiv.org/abs/cond-mat/0512219
dc.identifierPhys. Rev. B 73, 245101 (2006)
dc.identifierdoi:10.1103/PhysRevB.73.245101
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/135346
dc.subjectStrongly Correlated Electrons
dc.subjectSuperconductivity
dc.titleElectron correlations and bond-length fluctuations in layered copper oxides: electron versus hole doping
dc.typetext

Files

Collections