Residual Resistance in a 2DES: A Phenomenological Approach

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dc.creatorVolkov, A. F.
dc.creatorPavlovskii, V. V.
dc.date2003-05-23
dc.date2003-10-06
dc.date.accessioned2026-07-07T02:51:30Z
dc.date.available2026-07-07T02:51:30Z
dc.descriptionWe consider a simple phenomenological model of a semiconductor with absolute negative conductance in a magnetic field. We find the form of the domains of the electric field and current which arise as a result of an instability of a uniform state. We show that in both Corbino disc and Hall bar samples the residual conductance and resistance are negative and exponentially small; they decrease exponentially with increasing length L_{x,y}.
dc.description7 pages, 3 Fig; typos corrected, references added
dc.identifierhttps://arxiv.org/abs/cond-mat/0305562
dc.identifierhttp://arxiv.org/abs/cond-mat/0305562
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/21482
dc.subjectCondensed Matter
dc.titleResidual Resistance in a 2DES: A Phenomenological Approach
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