Epitaxial MgB2 superconducting thin films with a transition temperature of 39 Kelvin
| dc.creator | Kang, W. N. | |
| dc.creator | Kim, Hyeong-Jin | |
| dc.creator | Choi, Eun-Mi | |
| dc.creator | Jung, C. U. | |
| dc.creator | Lee, Sung-Ik | |
| dc.date | 2001-03-08 | |
| dc.date | 2001-03-09 | |
| dc.date.accessioned | 2026-07-07T02:40:42Z | |
| dc.date.available | 2026-07-07T02:40:42Z | |
| dc.description | We report the growth of high-quality epitaxial MgB2 thin films on (1102) Al2O3 and (001) SrTiO3 substrates by using a pulsed laser deposition technique. The thin films grown on Al2O3 substrates show a Tc of 39 K with a sharp transition width of ~ 0.7 K. The critical current density in zero field is ~ 8 x 10^6 A/cm^2 at 5 K, suggesting that this compound has great potential for industrial applications. Also, Al2O3 is a very promising substrate in terms of superconducting device applications because of its high thermal conductivity and small dielectric constant. For the films deposited on Al2O3, X-ray diffraction patterns indicate a c-axis-oriented crystal structure perpendicular to the substrate surface whereas the films deposited on SrTiO3 show {101} plane as the preferred orientation. | |
| dc.description | 3 pages and 3 figures, submitted Mar. 2, 2001 | |
| dc.identifier | https://arxiv.org/abs/cond-mat/0103179 | |
| dc.identifier | http://arxiv.org/abs/cond-mat/0103179 | |
| dc.identifier | Published in Science 292, 1521 (25 May 2001). | |
| dc.identifier.uri | http://salesiana.dossiersoluciones.com/handle/123456789/17465 | |
| dc.subject | Superconductivity | |
| dc.title | Epitaxial MgB2 superconducting thin films with a transition temperature of 39 Kelvin | |
| dc.type | text |