Universal Statistics of Transport in Disordered Conductors

dc.creatorLee, Hyunwoo
dc.creatorYakovetz, A. Yu.
dc.creatorLevitov, L. S.
dc.date1994-03-02
dc.date1994-09-22
dc.date.accessioned2026-07-07T09:31:44Z
dc.date.available2026-07-07T09:31:44Z
dc.descriptionIn low temperature limit, we study electron counting statistics of a disordered conductor. We derive an expression for the distribution of charge transmitted over a finite time interval by using a result from the random matrix theory of quasi one dimensional disordered conductors. In the metallic regime, we find that the peak of the distribution is Gaussian and shows negligible sample to sample variations. We also find that the tails of the distribution are neither Gaussian nor Poisson and exhibit strong sample to sample variations.
dc.description11 pages, REVTEX3.0, MIT-CMT-HL9409
dc.identifierhttps://arxiv.org/abs/cond-mat/9403009
dc.identifierhttp://arxiv.org/abs/cond-mat/9403009
dc.identifierPhys. Rev. B 51, 4079 (1995)
dc.identifierdoi:10.1103/PhysRevB.51.4079
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/158566
dc.subjectCondensed Matter
dc.titleUniversal Statistics of Transport in Disordered Conductors
dc.typetext

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