Spin-Orbit Effects in Diluted Magnetic Semiconductors

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dc.creatorLee, Byounghak
dc.creatorCartoixa, Xavier
dc.creatorTrivedi, Nandini
dc.creatorMartin, Richard M.
dc.date2004-10-03
dc.date.accessioned2026-07-07T03:01:13Z
dc.date.available2026-07-07T03:01:13Z
dc.descriptionWe present a theoretical study of diluted magnetic semiconductors that treats the local sp-d exchange interaction J between the itinerant carriers and the Mn d electrons within a realistic band structure and goes beyond previous mean-field approaches. In case of (Ga,Mn)As, we find that strong exchange potentials tightly bind carriers near impurity sites. Spin-orbit coupling is found to have a more pronounced effect on spin polarization at weak coupling and this feature can be exploited for magnetotransport. For low doping regime, we predict that spin-orbit coupling splits impurity bands and can induce a novel insulating phase.
dc.description4 pages, 5 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0410051
dc.identifierhttp://arxiv.org/abs/cond-mat/0410051
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/24989
dc.subjectMaterials Science
dc.titleSpin-Orbit Effects in Diluted Magnetic Semiconductors
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