Electronic states of Mn4+ ions in p-type GaN
| dc.creator | Han, B. | |
| dc.creator | Wessels, B. W. | |
| dc.creator | Ulmer, M. P. | |
| dc.date | 2004-06-09 | |
| dc.date.accessioned | 2026-07-07T02:58:34Z | |
| dc.date.available | 2026-07-07T02:58:34Z | |
| dc.description | The electronic states of manganese in p-type GaN are investigated using photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopies. A series of sharp PL lines at 1.0 eV is observed in codoped GaN and attributed to the intra d-shell transition 4T2(F)-4T1(F) of Mn4+ ions. PLE spectrum of the Mn4+ [4T2(F)-4T1(F)] luminescence reveals intra-center excitation processes via the excited states of Mn4+ ions. PLE peaks observed at 1.79 and 2.33 eV are attributed to the intra d-shell 4T1(P)-4T1(F) and 4A2(F)-4T1(F) transitions of Mn4+, respectively. In addition to the intra-shell excitation processes, a broad PLE band involving charge-transfer transition of the Mn4+/3+ deep level is observed, which is well described by the Lucovsky model. As determined from the onset of this PLE band, the position of the Mn4+/3+ deep level is 1.11 eV above the valence band maximum, which is consistent with prior theory using ab initio calculations. Our work indicates 4+ is the predominant oxidation state of Mn ions in p-type GaN:Mn when the Fermi energy is lower than 1.11 eV above the valence band maximum. | |
| dc.description | Submitted to Appl. Phys. Lett | |
| dc.identifier | https://arxiv.org/abs/cond-mat/0406228 | |
| dc.identifier | http://arxiv.org/abs/cond-mat/0406228 | |
| dc.identifier.uri | http://salesiana.dossiersoluciones.com/handle/123456789/24145 | |
| dc.subject | Materials Science | |
| dc.title | Electronic states of Mn4+ ions in p-type GaN | |
| dc.type | text |