Nanostructures, Magnetic Semiconductors and Spinelectronics

dc.creatorKervalishvili, P.
dc.date2007-08-10
dc.date.accessioned2026-07-07T08:23:07Z
dc.date.available2026-07-07T08:23:07Z
dc.descriptionA short overview is given of recent advances in the field of nanosemiconductors, which are suitable as materials for spin polarized transport of charge carriers. On the basis of last theoretical and experimental achievements it is shown that development of diluted and wide forbidden zone semiconductors with controlled disorders as well as their molecular structures is the very prospective way for magnetic semiconductors preparation.
dc.descriptionSubmitted on behalf of TIMA Editions (http://irevues.inist.fr/tima-editions)
dc.identifierhttps://arxiv.org/abs/0708.1445
dc.identifierhttp://arxiv.org/abs/0708.1445
dc.identifierDans European Nano Systems Worshop - ENS 2006, Paris : France (2006)
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/135879
dc.subjectMaterials Science
dc.titleNanostructures, Magnetic Semiconductors and Spinelectronics
dc.typetext

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