Effects of topological defects and local curvature on the electronic properties of planar graphene

dc.creatorCortijo, Alberto
dc.creatorVozmediano, María A. H.
dc.date2006-12-14
dc.date.accessioned2026-07-07T11:57:35Z
dc.date.available2026-07-07T11:57:35Z
dc.descriptionA formalism is proposed to study the electronic and transport properties of graphene sheets with corrugations as the one recently synthesized. The formalism is based on coupling the Dirac equation that models the low energy electronic excitations of clean flat graphene samples to a curved space. A cosmic string analogy allows to treat an arbitrary number of topological defects located at arbitrary positions on the graphene plane. The usual defects that will always be present in any graphene sample as pentagon-heptagon pairs and Stone-Wales defects are studied as an example. The local density of states around the defects acquires characteristic modulations that could be observed in scanning tunnel and transmission electron microscopy.
dc.descriptionNucl. Phys. B in (2006) in press
dc.identifierhttps://arxiv.org/abs/cond-mat/0612374
dc.identifierhttp://arxiv.org/abs/cond-mat/0612374
dc.identifierNucl.Phys.B763:293-308,2007; Nucl.Phys.B807:659-660,2009
dc.identifierdoi:10.1016/j.nuclphysb.2006.10.031 10.1016/j.nuclphysb.2008.09.006
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/205928
dc.subjectStrongly Correlated Electrons
dc.subjectHigh Energy Physics - Theory
dc.titleEffects of topological defects and local curvature on the electronic properties of planar graphene
dc.typetext

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