Low Temperature Metallic State of Ultrathin Films of Bismuth

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dc.creatorHernandez, L. M.
dc.creatorParendo, Kevin A.
dc.creatorGoldman, A. M.
dc.date2002-10-22
dc.date2002-10-23
dc.date.accessioned2026-07-07T02:47:52Z
dc.date.available2026-07-07T02:47:52Z
dc.descriptionMeasurements of resistance vs. temperature have been carried out on a sequence of quench-condensed ultrathin films of amorphous bismuth (a-Bi). The resistance below about 0.1K was found to be temperature independent in a range of films with thicknesses spanning the superconductor-to-insulator transition that would be inferred by analyzing data obtained above 0.14K. Film magnetoresistance was temperature dependent in the same temperature range over which the resistance was temperature independent. This implies that the low temperature metallic regime is intrinsic, and not a consequence of failure to cool the electrons.
dc.description4 pages, 4 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0210493
dc.identifierhttp://arxiv.org/abs/cond-mat/0210493
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/20176
dc.subjectSuperconductivity
dc.subjectDisordered Systems and Neural Networks
dc.titleLow Temperature Metallic State of Ultrathin Films of Bismuth
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