A Schottky top-gated two-dimensional electron system in a nuclear spin free Si/SiGe heterostructure

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dc.creatorSailer, J.
dc.creatorLang, V.
dc.creatorAbstreiter, G.
dc.creatorTsuchiya, G.
dc.creatorItoh, K. M.
dc.creatorAger III, J. W.
dc.creatorHaller, E. E.
dc.creatorKupidura, D.
dc.creatorHarbusch, D.
dc.creatorLudwig, S.
dc.creatorBougeard, D.
dc.date2009-01-16
dc.date.accessioned2026-07-07T12:31:02Z
dc.date.available2026-07-07T12:31:02Z
dc.descriptionWe report on the realization and top-gating of a two-dimensional electron system in a nuclear spin free environment using 28Si and 70Ge source material in molecular beam epitaxy. Electron spin decoherence is expected to be minimized in nuclear spin-free materials, making them promising hosts for solid-state based quantum information processing devices. The two-dimensional electron system exhibits a mobility of 18000 cm2/Vs at a sheet carrier density of 4.6E11 cm-2 at low temperatures. Feasibility of reliable gating is demonstrated by transport through split-gate structures realized with palladium Schottky top-gates which effectively control the two-dimensional electron system underneath. Our work forms the basis for the realization of an electrostatically defined quantum dot in a nuclear spin free environment.
dc.description8 pages, 3 figures
dc.identifierhttps://arxiv.org/abs/0901.2433
dc.identifierhttp://arxiv.org/abs/0901.2433
dc.identifierPhys. Status Solidi RRL 3, No. 2, 61-63 (2009)
dc.identifierdoi:10.1002/pssr.200802275
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/216320
dc.subjectMesoscale and Nanoscale Physics
dc.subjectMaterials Science
dc.titleA Schottky top-gated two-dimensional electron system in a nuclear spin free Si/SiGe heterostructure
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