Comment on "Performance of a spin based insulated gate field effect transistor" [cond-mat/0603260] [cond-mat/0603260]

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dc.creatorBandyopadhyay, S.
dc.creatorCahay, M.
dc.date2006-04-23
dc.date.accessioned2026-07-07T07:05:41Z
dc.date.available2026-07-07T07:05:41Z
dc.descriptionIn a recent e-print [cond-mat/0603260] Hall and Flatte claim that a particular spin based field effect transistor (SPINFET), which they have analyzed, will have a lower threshold voltage, lower switching energy and lower leakage current than a comparable metal oxide semiconductor field effect transistor (MOSFET). Here, we show that all three claims of HF are invalid.
dc.identifierhttps://arxiv.org/abs/cond-mat/0604532
dc.identifierhttp://arxiv.org/abs/cond-mat/0604532
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/109754
dc.subjectMesoscale and Nanoscale Physics
dc.titleComment on "Performance of a spin based insulated gate field effect transistor" [cond-mat/0603260] [cond-mat/0603260]
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