Anisotropic lattice deformation of InAs self-assembled quantum dots embedded in GaNAs strain compensating layers

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dc.creatorMatsumura, Naoki
dc.creatorMuto, Shunichi
dc.creatorGanapathy, Sasilaka
dc.creatorSuemune, Ikuo
dc.creatorNumata, Ken
dc.creatorYabuta, Konami
dc.date2004-12-28
dc.date.accessioned2026-07-07T03:02:57Z
dc.date.available2026-07-07T03:02:57Z
dc.descriptionLattice deformations of InAs self-assembled quantum dots, which were grown on (001) GaAs substrates and embedded in GaNAs strain compensating layers (SCLs), were examined with an ion-channeling method in Rutherford backscattering spectrometry. The channeling experiments demonstrated that the increase of the nitrogen concentrations in the GaNAs SCLs caused the indium lattice displacements along the [001] growth direction while those parallel to the (001) crystal plane were kept unchanged
dc.description8 pages with 5 postscript figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0412721
dc.identifierhttp://arxiv.org/abs/cond-mat/0412721
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/25584
dc.subjectMaterials Science
dc.titleAnisotropic lattice deformation of InAs self-assembled quantum dots embedded in GaNAs strain compensating layers
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