All-electrical measurement of spin injection in a magnetic $p$-$n$ junction diode

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dc.creatorChen, Peifeng
dc.creatorMoser, Juergen
dc.creatorKotissek, Philipp
dc.creatorSadowski, Janusz
dc.creatorZenger, Marcus
dc.creatorWeiss, Dieter
dc.creatorWegscheider, Werner
dc.date2006-08-21
dc.date.accessioned2026-07-07T07:44:20Z
dc.date.available2026-07-07T07:44:20Z
dc.descriptionMagnetic $p$-$n$ junction diodes are fabricated to investigate spin-polarized electron transport. The injection of spin-polarized electrons in a semiconductor is achieved by driving a current from a ferromagnetic injector (Fe), into a bulk semiconductor ($n$-GaAs) via schottky contact. For detection, a diluted magnetic semiconductor ($p$-GaMnAs) layer is used. Clear magnetoresistance was observed only when a high forward bias was applied across the $p$-$n$ junction.
dc.description4 pages, 4 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0608453
dc.identifierhttp://arxiv.org/abs/cond-mat/0608453
dc.identifierPhys. Rev. B 74, 241302(R) (2006)
dc.identifierdoi:10.1103/PhysRevB.74.241302
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/123163
dc.subjectMesoscale and Nanoscale Physics
dc.titleAll-electrical measurement of spin injection in a magnetic $p$-$n$ junction diode
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