Scaling Properties of Critical Phase Change Conditions in Ge2Sb2Te5 Nanopillars

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dc.creatorOzatay, O.
dc.creatorStipe, B.
dc.creatorKatine, J. A.
dc.creatorTerris, B. D.
dc.date2008-04-28
dc.date.accessioned2026-07-07T09:35:47Z
dc.date.available2026-07-07T09:35:47Z
dc.descriptionWe have measured the critical phase change conditions induced by electrical pulses in Ge2Sb2Te5 nanopillar phase change memory devices by constructing a comprehensive resistance map as a function of pulse parameters (width, amplitude and trailing edge). Our measurements reveal that the cooling scheme and the details of the contact geometry play the dominant role in determining the final phase composition of the device. A three-dimensional finite element model of the electro-thermal physics not only provides good insights into the underlying physical mechanisms of the switching dynamics but also quantitatively accounts for the observed scaling behaviour.
dc.description12 pages, 4 figures
dc.identifierhttps://arxiv.org/abs/0804.4485
dc.identifierhttp://arxiv.org/abs/0804.4485
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/159946
dc.subjectMesoscale and Nanoscale Physics
dc.titleScaling Properties of Critical Phase Change Conditions in Ge2Sb2Te5 Nanopillars
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