Comment on ``Electric Field Scaling at B=0 Metal-Insulator Transition in Two Dimensions''

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dc.creatorIsmail, K.
dc.creatorChu, J. O.
dc.creatorPopovic, Dragana
dc.creatorFowler, A. B.
dc.creatorWashburn, S.
dc.date1997-07-06
dc.date.accessioned2026-07-07T09:11:54Z
dc.date.available2026-07-07T09:11:54Z
dc.descriptionIn a recent Letter, Kravchenko et al. [cond-mat/9608101] have provided evidence for a metal-insulator transition (MIT) in a two-dimensional electron system (2DES) in Si metal-oxide-semiconductor field-effect transistors (MOSFETs). The transition observed in these samples occurs at relatively low electron densities $n_{s}\sim (1-2)\times 10^{11}cm^{-2}$ and high disorder $σ_{c}\sim e^{2}/2h$. We present evidence for a 2D MIT in a structure where the disorderis about two orders of magnitude weaker than in Si MOSFETs. The MIT occurs in the same range of $n_s$ Providing very strong evidence that the 2D MIT in Si-based devices is caused by electron-electron interactions.
dc.descriptionone latex page plus one (color) figure (.eps)
dc.identifierhttps://arxiv.org/abs/cond-mat/9707061
dc.identifierhttp://arxiv.org/abs/cond-mat/9707061
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/151845
dc.subjectStrongly Correlated Electrons
dc.titleComment on ``Electric Field Scaling at B=0 Metal-Insulator Transition in Two Dimensions''
dc.typetext

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