M.i.p. detection performances of a 100 us read-out CMOS pixel sensor with digitised outputs

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dc.creatorWinter, Marc
dc.creatorBaudot, Jerome
dc.creatorBesson, Auguste
dc.creatorColledani, Claude
dc.creatorDegerli, Yavuz
dc.creatorDe Masi, Rita
dc.creatorDorokhov, Andrei
dc.creatorDoziere, Guy
dc.creatorDulinski, Wojciech
dc.creatorGelin, Marie
dc.creatorGuilloux, Fabrice
dc.creatorHimmi, Abdelkader
dc.creatorHu-Guo, Christine
dc.creatorMorel, Frederic
dc.creatorOrsini, Fabienne
dc.creatorValin, Isabelle
dc.creatorVoutsinas, Georgios
dc.date2009-02-16
dc.date.accessioned2026-07-07T12:42:17Z
dc.date.available2026-07-07T12:42:17Z
dc.descriptionSwift, high resolution CMOS pixel sensors are being developed for the ILC vertex detector, aiming to allow approaching the interaction point very closely. A major issue is the time resolution of the sensors needed to deal with the high occupancy generated by the beam related background. A 128x576 pixel sensor providing digitised outputs at a read-out time of 92.5 us, was fabricated in 2008 within the EU project EUDET, and tested with charged particles at the CERN-SPS. Its prominent performances in terms of noise, detection efficiency versus fake hit rate, spatial resolution and radiation tolerance are overviewed. They validate the sensor architecture.
dc.description3 pages, 1 figure, LCWS08 proceedings
dc.identifierhttps://arxiv.org/abs/0902.2717
dc.identifierhttp://arxiv.org/abs/0902.2717
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/220025
dc.subjectInstrumentation and Detectors
dc.subjectHigh Energy Physics - Experiment
dc.titleM.i.p. detection performances of a 100 us read-out CMOS pixel sensor with digitised outputs
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