Medium-energy ion-scattering study of strained holmium silicide nanoislands grown on silicon (100)

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dc.creatorWood, T. J.
dc.creatorEames, C.
dc.creatorBonet, C.
dc.creatorReakes, M. B.
dc.creatorNoakes, T. C. Q.
dc.creatorBailey, P.
dc.creatorTear, S. P.
dc.date2008-07-29
dc.date.accessioned2026-07-07T09:53:33Z
dc.date.available2026-07-07T09:53:33Z
dc.descriptionWe have used medium-energy ion scattering (MEIS) to quantitatively analyze the structure of holmium silicide islands grown on the Si(100) surface. Structure fitting to the experimental data unambiguously shows that the tetragonal silicide phase is present and not the hexagonal phase, which is associated with the growth of nanowires at submonolayer coverages. Islands formed with a lower holmium coverage of 3 ML are also shown to be tetragonal, which suggests that the hexagonal structure is not a low coverage precursor to the growth of the tetragonal phase. MEIS simulations of large nanoislands, which include the effects of lateral strain relief, have been performed and these compare well with the experimental data.
dc.description8 pages, 11 figures
dc.identifierhttps://arxiv.org/abs/0807.4681
dc.identifierhttp://arxiv.org/abs/0807.4681
dc.identifierPhys. Rev. B 78, 035423 (2008)
dc.identifierdoi:10.1103/PhysRevB.78.035423
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/165991
dc.subjectMaterials Science
dc.titleMedium-energy ion-scattering study of strained holmium silicide nanoislands grown on silicon (100)
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