Disorder Effects in the Quantum Hall Effect of Graphene p-n Junctions

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dc.creatorLi, Jian
dc.creatorShen, Shun-Qing
dc.date2008-07-08
dc.date2008-10-26
dc.date.accessioned2026-07-07T12:59:58Z
dc.date.available2026-07-07T12:59:58Z
dc.descriptionThe quantum Hall effect in graphene p-n junctions is studied numerically with emphasis on the effect of disorder at the interface of two adjacent regions. Conductance plateaus are found to be attached to the intensity of the disorder, and are accompanied by universal conductance fluctuations in the bipolar regime, which is in good agreement with theoretical predictions of the random matrix theory on quantum chaotic cavities. The calculated Fano factors can be used in an experimental identification of the underlying transport character.
dc.description7 pages, 5 figures
dc.identifierhttps://arxiv.org/abs/0807.1157
dc.identifierhttp://arxiv.org/abs/0807.1157
dc.identifierPhys. Rev. B 78, 205308 (2008)
dc.identifierdoi:10.1103/PhysRevB.78.205308
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/225738
dc.subjectMesoscale and Nanoscale Physics
dc.titleDisorder Effects in the Quantum Hall Effect of Graphene p-n Junctions
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