On the Origin of the 2DEG Carrier Density at the LaAlO$_3$/SrTiO$_3$ Interface
| dc.creator | Popović, Zoran S. | |
| dc.creator | Satpathy, Sashi | |
| dc.creator | Martin, Richard M. | |
| dc.date | 2008-11-11 | |
| dc.date | 2008-12-09 | |
| dc.date.accessioned | 2026-07-07T12:09:58Z | |
| dc.date.available | 2026-07-07T12:09:58Z | |
| dc.description | Transport measurements of the two-dimensional electron gas (2DEG) at the LaAlO$_3$/SrTiO$_3$ interface have found a density of carriers much lower than expected from the "polar catastrophe" arguments. From a detail density-functional study, we suggest how this discrepancy may be reconciled. We find that electrons occupy multiple subbands at the interface leading to a rich array of transport properties. Some electrons are confined to a single interfacial layer and susceptible to localization, while others with small masses and extended over several layers are expected to contribute to transport. | |
| dc.description | 4 pages, 7 figures, Accepted in Phys. Rev. Lett | |
| dc.identifier | https://arxiv.org/abs/0811.1624 | |
| dc.identifier | http://arxiv.org/abs/0811.1624 | |
| dc.identifier.uri | http://salesiana.dossiersoluciones.com/handle/123456789/209807 | |
| dc.subject | Materials Science | |
| dc.title | On the Origin of the 2DEG Carrier Density at the LaAlO$_3$/SrTiO$_3$ Interface | |
| dc.type | text |